savantic semiconductor product specification silicon pnp power transistors 2SB686 d escription with to-3p(i) package complement to type 2sd716 applications power amplifier applications recommend for 30~35w high-fidelity audio frequency amplifier output stage pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector- base voltage open emitter -100 v v ceo collector- emitter voltage open base -100 v v ebo emitter-base voltage open collector -5 v i c collector current -6 a i e emitter current 6 a p t total power dissipation t c =25 60 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3p(i)) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2SB686 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-50ma ,i b =0 -100 v v (br)ebo emitter-base breakdown voltage i e =-10ma ,i c =0 -5 v v cesat collector-emitter saturation voltage i c =-4a; i b =-0.4a -2.0 v v be base-emitter voltage i c =-4a ; v ce =-5v -1.5 v i cbo collector cut-off current v cb =-100v; i e =0 -10 a i ebo emitter cut-off current v eb =-5v; i c =0 -10 a h fe dc current gain i c =-1a ; v ce =-5v 55 160 f t transition frequency i c =-1a ; v ce =-5v 10 mhz c ob collector output capacitance i e =0 ; v cb =-10v ;f=1mhz 270 pf h fe classifications r o 55-110 80-160
savantic semiconductor product specification 3 silicon pnp power transistors 2SB686 package outline fig.2 outline dimensions(unindicated tolerance: 0.10 mm)
savantic semiconductor product specification 4 silicon pnp power transistors 2SB686
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